Structure for symmetrical capacitor

ABSTRACT

Capacitance circuits are provided disposing a lower vertical-native capacitor metal layer above a planar front-end-of-line semiconductor base substrate, planar metal bottom plates spaced a bottom plate distance from the base and top plates above the bottom plates spaced a top plate distance from the base defining metal-insulator-metal capacitors, top plate footprints disposed above the base substrate smaller than bottom plate footprints and exposing bottom plate remainder upper lateral connector surfaces; disposing parallel positive port and negative port upper vertical-native capacitor metal layers over and each connected to top plate and bottom plate upper remainder lateral connector surface. Moreover, electrical connecting of the first top plate and the second bottom plate to the positive port metal layer and of the second top plate and the first bottom to the negative port metal layer impart equal total negative port and positive port metal-insulator-metal capacitor extrinsic capacitance.

CROSS REFERENCE TO RELATED APPLICATION

This application is a division of application Ser. No. 11/970,665, filedJan. 8, 2008, which is a continuation-in-part of application Ser. No.11/436,251, filed May 18, 2006.

TECHNICAL FIELD

This invention relates generally to methods, systems and designstructures, and more specifically for capacitors and capacitorstructures with symmetrical characteristics.

BACKGROUND

On-chip capacitors are critical components of integrated circuits thatare fabricated on silicon semiconductors. These capacitors are used fora variety of purposes: illustrative examples include bypass andcapacitive matching as well as coupling and decoupling. The design andimplementation of capacitor structures on silicon semiconductor chipsmay be dependent upon one or more symmetrical structural, target circuitquality and low parasitic resistance performance characteristics.

BRIEF SUMMARY

Methods, systems and design structures for a capacitance circuitassembly mounted on a semiconductor chip are provided comprising atleast two capacitors mounted close to a substrate, wherein eachcapacitor has a lateral lower conductive plate mounted near enough tothe substrate to have extrinsic capacitance greater than an upper plateextrinsic capacitance. One half of lower plates and one half of upperplates are connected to a first port, and a remaining one half of upperplates and lower plates are connected to a second port, the first andsecond port having about equal extrinsic capacitance from the lowerplates. In another aspect, the at least two capacitors areMetal-Insulator-Metal Capacitors, and the capacitance circuit assemblyis located in a back-end-of-line semiconductor capacitor circuit. Inanother aspect, the substrate further comprises a front-end-of-linecapacitor defining a substrate footprint, and the at least twocapacitors are electrically connected to the front-end-of-line capacitorand disposed above the substrate within the front-end-of-line capacitorfootprint. In another aspect, the at least two capacitors are at leastfour capacitors. In a further aspect, the at least four capacitors arearrayed in a rectangular array generally parallel to the substrate. Inanother aspect, a Vertical Native Capacitor is electrically connected toat least two capacitors and disposed above the substrate within thefront-end-of-line capacitor footprint. In another aspect, the first andsecond plates are formed of the same material. In a further aspect, theplates are a metal or polysilicon, and/or the dielectric material has apermeability value greater than about 4 (er>4).

In another aspect, a method for forming a semiconductor chip capacitancecircuit, comprises disposing a lower vertical-native capacitor metallayer above a planar front-end-of-line semiconductor base substrate;disposing planar first and second metal bottom plates parallel to andspaced a bottom plate distance from the semiconductor base substrate,the first bottom plate defining a first bottom plate footprint disposedabove the semiconductor base substrate, the second bottom plate defininga second bottom plate footprint disposed above the semiconductor basesubstrate; forming a first insulator and a first planar metal top plateabove the first bottom plate, the first top plate parallel to and spaceda top plate distance from the semiconductor base substrate, the firsttop plate and the first insulator and the first bottom plate defining afirst metal-insulator-metal capacitor, the first top plate defining afootprint disposed above the semiconductor base substrate smaller thanthe first bottom plate footprint and exposing a first bottom plateremainder upper lateral connector surface, the top plate distance largerthan the bottom plate distance; forming a second insulator and a secondplanar metal top plate above the second bottom plate, the second topplate parallel to and spaced the top plate distance from thesemiconductor base substrate, the second top plate and the secondinsulator and the second bottom plate defining a secondmetal-insulator-metal capacitor, the second top plate defining afootprint disposed above the semiconductor base substrate smaller thanthe second bottom plate footprint and exposing a second bottom plateremainder upper lateral connector surface; disposing parallel positiveport and negative port upper vertical-native capacitor metal layers overthe first and second metal-insulator-metal capacitors, the positive portand the negative port upper vertical-native capacitor metal layers andthe lower vertical-native capacitor metal layer defining avertical-native capacitor structure; electrically connecting the firsttop plate and the second bottom plate upper remainder lateral connectorsurface to the positive port upper vertical-native capacitor metallayer; electrically connecting the second top plate and the first bottomplate upper remainder lateral connector surface to the negative portupper vertical-native capacitor metal layer; and electrically connectingthe lower vertical-native capacitor metal layer to a one of the negativeport upper vertical-native capacitor metal layer and the positive portupper vertical-native capacitor metal layer.

In one aspect, a method comprises incorporating metal-insulator-metalcapacitors plates between the upper and the lower vertical-nativecapacitor metal layers within a semiconductor chip capacitance circuitback-end-of-line region. In another aspect a method comprises the firsttop plate forming a first top plate extrinsic capacitance with thesemiconductor base substrate as a function of the top plate distance;the second top plate forming a second top plate extrinsic capacitancewith the semiconductor base substrate as a function of the top platedistance; the first bottom plate forming a first bottom plate extrinsiccapacitance with the semiconductor base substrate as a function of thebottom plate distance and greater than the first top plate extrinsiccapacitance; the second bottom plate forming a second bottom plateextrinsic capacitance with the semiconductor base substrate as afunction of the bottom plate distance and greater than the second topplate extrinsic capacitance; the electrical connecting of the first topplate and the second bottom plate upper remainder lateral connectorsurface to the positive port upper vertical-native capacitor metal layerimparting a total metal-insulator-metal capacitor extrinsic capacitanceto the positive port equal to a sum of the first top plate extrinsiccapacitance and the second bottom plate extrinsic capacitance; and theelectrical connecting of the second top plate and the first bottom plateupper remainder lateral connector surface to the negative port uppervertical-native capacitor metal layer imparting a totalmetal-insulator-metal capacitor extrinsic capacitance to the negativeport equal to a sum of the second top plate extrinsic capacitance andthe first bottom plate extrinsic capacitance and equal to the positiveport total metal-insulator-metal capacitor extrinsic capacitance.

In one aspect, a method comprises forming a semiconductor base substrateas a front-end-of-line metal-oxide-silicon capacitor base substrate. Inanother aspect upper and the lower vertical-native capacitor metallayers define a vertical-native capacitor footprint disposed above thebase substrate and encompassing the first bottom plate and the secondbottom plate footprints, disposing a first terminal on the positive portupper vertical-native capacitor metal layer within the vertical-nativecapacitor footprint and a second terminal on the negative port uppervertical-native capacitor metal layer within the vertical-nativecapacitor footprint. In one method pluralities of top plates and bottomplates are provided, and in one aspect disposed in a rectangular arraygenerally parallel to the base substrate.

One method for forming a semiconductor chip capacitance circuit byincorporating a plurality of metal-insulator-metal capacitors betweenupper and lower vertical-native capacitor metal layers within asemiconductor chip capacitance circuit back-end-of-line regioncomprises: disposing the lower vertical-native capacitor metal layerabove a planar front-end-of-line metal-oxide-silicon capacitor basesubstrate; forming a lower dielectric material layer over a firstportion of the lower vertical-native capacitor metal layer; formingplanar first and second metal-insulator-metal capacitor bottom plates onthe lower dielectric material layer each parallel to and spaced a bottomplate distance from the semiconductor base substrate, each of the firstand second bottom plates defining a bottom plate footprint disposedabove the semiconductor base substrate, the lower dielectric materiallayer electrically insulating the first and the second bottom platesfrom the lower vertical-native capacitor metal layer; forming a firstmetal-insulator-metal capacitor insulator layer on the first bottomplate defining a first insulator footprint disposed above thesemiconductor base substrate smaller than and above the first bottomplate footprint and exposing a first bottom plate lateral connectorupper surface; forming a second metal-insulator-metal capacitorinsulator layer on the second bottom plate defining a second insulatorfootprint disposed above the semiconductor base substrate smaller thanand above the second bottom plate footprint and exposing a second bottomplate lateral connector upper surface; forming a firstmetal-insulator-metal capacitor top plate on the first insulator layerparallel to and spaced a top plate distance from the semiconductor basesubstrate defining a first top plate footprint disposed above the firstinsulator footprint and exposing the first bottom plate lateralconnector upper surface; forming a second metal-insulator-metalcapacitor top plate on the second insulator layer parallel to and spacedthe top plate distance from the semiconductor base substrate defining asecond top plate footprint disposed above the second insulator footprintand exposing the second bottom plate lateral connector upper surface;forming a comprehensive dielectric material layer defining vias over aremainder exposed portion of the lower vertical-native capacitor metallayer, the first and the second exposed bottom plate lateral connectorupper surfaces and the first and the second top plates; and disposingparallel positive port and negative port upper vertical-native capacitormetal layers upon the comprehensive dielectric material layer, the firsttop plate and the second exposed bottom plate lateral connector uppersurface each in a via circuit connection through the comprehensivedielectric material layer with the positive port upper vertical-nativecapacitor metal layer, the second top plate and the first exposed bottomplate lateral connector upper surface each in a via circuit connectionthrough the comprehensive dielectric material layer with the negativeport upper vertical-native capacitor metal layer, and the remainderexposed lower vertical-native capacitor metal layer portion in a viacircuit connection through the comprehensive dielectric material layerwith a one of the negative and the positive upper vertical-nativecapacitor metal layers.

A capacitance circuit assembly mounted on a semiconductor chip comprisesa lower vertical-native capacitor metal layer disposed above a planarfront-end-of-line semiconductor base substrate; planar first and secondmetal bottom plates disposed parallel to and spaced a bottom platedistance from the semiconductor base substrate, the first bottom platedefining a first bottom plate footprint disposed above the semiconductorbase substrate, the second bottom plate defining a second bottom platefootprint disposed above the semiconductor base substrate; a firstplanar metal top plate and a first insulator formed above the firstbottom plate, the first top plate parallel to and spaced a top platedistance from the semiconductor base substrate, the first top plate andthe first insulator and the first bottom plate defining a firstmetal-insulator-metal capacitor, the first top plate defining afootprint disposed above the semiconductor base substrate smaller thanthe first bottom plate footprint and exposing a first bottom plateremainder upper lateral connector surface, the top plate distance largerthan the bottom plate distance; a second planar metal top plate and asecond insulator formed above the second bottom plate, the second topplate parallel to and spaced the top plate distance from thesemiconductor base substrate, the second top plate and the secondinsulator and the second bottom plate defining a secondmetal-insulator-metal capacitor, the second top plate defining afootprint disposed above the semiconductor base substrate smaller thanthe second bottom plate footprint and exposing a second bottom plateremainder upper lateral connector surface; and parallel positive portand negative port upper vertical-native capacitor metal layers disposedover the first and second metal-insulator-metal capacitors, the positiveport and the negative port upper vertical-native capacitor metal layersand the lower vertical-native capacitor metal layer defining avertical-native capacitor; wherein the first top plate and the secondbottom plate upper remainder lateral connector surface are electricallyconnected to the positive port upper vertical-native capacitor metallayer, the second top plate and the first bottom plate upper remainderlateral connector surface are electrically connected to the negativeport upper vertical-native capacitor metal layer, and the lowervertical-native capacitor metal layer is electrically connected to a oneof the negative port upper vertical-native capacitor metal layer and thepositive port upper vertical-native capacitor metal layer.

In one semiconductor capacitance circuit assembly, themetal-insulator-metal capacitors plates are incorporated between theupper and the lower vertical-native capacitor metal layers within asemiconductor chip capacitance circuit back-end-of-line region. Inanother semiconductor capacitance circuit assembly, a first top plateforms a first top plate extrinsic capacitance with the semiconductorbase substrate as a function of the top plate distance; a second topplate forms a second top plate extrinsic capacitance with thesemiconductor base substrate as a function of the top plate distance; afirst bottom plate forms a first bottom plate extrinsic capacitance withthe semiconductor base substrate as a function of the bottom platedistance and greater than the first top plate extrinsic capacitance; asecond bottom plate forms a second bottom plate extrinsic capacitancewith the semiconductor base substrate as a function of the bottom platedistance and greater than the second top plate extrinsic capacitance;the electrical connecting of the first top plate and the second bottomplate upper remainder lateral connector surface to the positive portupper vertical-native capacitor metal layer imparting a totalmetal-insulator-metal capacitor extrinsic capacitance to the positiveport equal to a sum of the first top plate extrinsic capacitance and thesecond bottom plate extrinsic capacitance; and the electrical connectingof the second top plate and the first bottom plate upper remainderlateral connector surface to the negative port upper vertical-nativecapacitor metal layer imparting a total metal-insulator-metal capacitorextrinsic capacitance to the negative port equal to a sum of the secondtop plate extrinsic capacitance and the first bottom plate extrinsiccapacitance, and wherein the total negative port metal-insulator-metalcapacitor extrinsic capacitance is equal to the total positive portmetal-insulator-metal capacitor extrinsic capacitance.

In one semiconductor capacitance circuit assembly, the semiconductorbase substrate is a front-end-of-line metal-oxide-silicon capacitor basesubstrate. In another semiconductor capacitance circuit assembly, upperand the lower vertical-native capacitor metal layers define avertical-native capacitor footprint disposed above the base substrateand encompassing the first bottom plate and the second bottom platefootprints, further comprising a first terminal disposed on the positiveport upper vertical-native capacitor metal layer within thevertical-native capacitor footprint and a second terminal disposed onthe negative port upper vertical-native capacitor metal layer within thevertical-native capacitor footprint. In one semiconductor capacitancecircuit assembly pluralities of first top plates, first bottom plates,second top plates and second bottom plates are provided, and in onecapacitance circuit assembly the pluralities are disposed in arectangular array generally parallel to the base substrate.

In one capacitance circuit assembly, each of the top metal plates andthe bottom metal plates comprise the same material. In anothercapacitance circuit assembly, the plate's material is a metal materialor a polysilicon material. And in another capacitance circuit assembly,the first insulator and the second insulator comprise dielectricmaterial having a permeability value greater than about 4 (er>4).

In another aspect, a design structure is embodied in a machine readablemedium, the design structure comprising disposing a lowervertical-native capacitor metal layer above a planar front-end-of-linesemiconductor base substrate; disposing planar first and second metalbottom plates parallel to and spaced a bottom plate distance from thesemiconductor base substrate, the first bottom plate defining a firstbottom plate footprint disposed above the semiconductor base substrate,the second bottom plate defining a second bottom plate footprintdisposed above the semiconductor base substrate; forming a firstinsulator and a first planar metal top plate above the first bottomplate, the first top plate parallel to and spaced a top plate distancefrom the semiconductor base substrate, the first top plate and the firstinsulator and the first bottom plate defining a firstmetal-insulator-metal capacitor, the first top plate defining afootprint disposed above the semiconductor base substrate smaller thanthe first bottom plate footprint and exposing a first bottom plateremainder upper lateral connector surface, the top plate distance largerthan the bottom plate distance; forming a second insulator and a secondplanar metal top plate above the second bottom plate, the second topplate parallel to and spaced the top plate distance from thesemiconductor base substrate, the second top plate and the secondinsulator and the second bottom plate defining a secondmetal-insulator-metal capacitor, the second top plate defining afootprint disposed above the semiconductor base substrate smaller thanthe second bottom plate footprint and exposing a second bottom plateremainder upper lateral connector surface; disposing parallel positiveport and negative port upper vertical-native capacitor metal layers overthe first and second metal-insulator-metal capacitors, the positive portand the negative port upper vertical-native capacitor metal layers andthe lower vertical-native capacitor metal layer defining avertical-native capacitor structure; electrically connecting the firsttop plate and the second bottom plate upper remainder lateral connectorsurface to the positive port upper vertical-native capacitor metallayer; electrically connecting the second top plate and the first bottomplate upper remainder lateral connector surface to the negative portupper vertical-native capacitor metal layer; and electrically connectingthe lower vertical-native capacitor metal layer to a one of the negativeport upper vertical-native capacitor metal layer and the positive portupper vertical-native capacitor metal layer. One design comprises anetlist. And another design structure resides on storage medium as adata format used for the exchange of layout data of integrated circuits.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIGS. 1 and 2 are schematic perspective depictions of two prior arttechniques for mounting capacitors on a substrate;

FIG. 3 depicts a schematic perspective of a MIM capacitor in relation toa substrate according to the present invention;

FIGS. 4 a and 4 b depict a schematic perspective of a conventional priorart connection of two MIM capacitors relative to a substrate;

FIGS. 5 a and 5 b depict a schematic perspective of a connection of twoMIM capacitors relative to a substrate according to this invention;

FIG. 6 depicts a schematic perspective of a conventional prior artconnection of four MIM capacitors relative to a substrate;

FIG. 7 depicts a schematic perspective of a connection of four MIMcapacitors relative to a substrate according to this invention.

FIG. 8 is perspective view of a VNCAP element according to the presentinvention;

FIG. 9 depicts a schematic perspective of a connection of two MIMcapacitors to a VNCAP according to this invention;

FIG. 10 depicts a schematic perspective of a conventional prior artconnection of four MIM capacitors relative to a substrate; and

FIG. 11 depicts a top plan view of a symmetrical capacitor structurerelative to a substrate according to this invention.

FIG. 12 is a side perspective illustration a composite VNCAP/MIMCAPstructure according to the present invention.

FIG. 13 illustrates a MIMCAP/VNCAP/MOSCAP structure according to thepresent invention.

FIG. 14 is a flow diagram of a design process used in semiconductordesign, manufacture, and/or test according to the present invention.

DETAILED DESCRIPTION

Capacitor structures may be categorized as being formed in one of tworegions: the Front End Of (production) Line (FEOL), or the Back End Ofthe Line (BEOL). In integrated-circuit fabrication lines, FEOLconventionally refers to earlier process stages that directly modify thesemiconductor substrate or the immediate contacts to it; for example,dopant diffusion and implantation, sputtering of gate films, oxidations,and the patterning steps associated with these. In contradistinction,the BEOL is metallization (PVD) for interconnects and vias (verticalinterconnects between planar interconnects) and associatednon-conducting depositions and growths (for example, polymers, glasses,oxides, nitrides, and oxinitrides) for electrical isolation, dielectrics(for capacitance), diffusion barriers, and mechanical passivation (inparticular, to prevent failure of interconnects by electromigration andstress migration). FEOL and BEOL are used in transferred sense to referto the levels of an IC fabricated in the corresponding stages. BEOL isthe metallization layers (say between four and ten) and associatedinsulating layers, and FEOL everything below that—mostly transistors.

It is known to use a metal oxide silicon (MOS) capacitor, or MOSCAP, forsemiconductor chip capacitor elements formed on the chip substrate inthe FEOL. However, MOSCAP capacitors generally require large chip areafootprints in integrated circuits (IC). Accordingly, design requirementstypically result in requiring large semiconductor chip footprint areasor real estate for MOSCAP capacitor structures relative to their circuitcapacitance properties, resulting in high production costs and reducedsemiconductor chip area availability for other circuit structures.Moreover, current leakage during a semiconductor circuit's idle mode isknown to result in increased power consumption. Silicon semiconductorchip capacitor structures thus usually require large MOSCAP capacitorstructures in order to avoid current leakage problems.

As the production cost of an IC is generally proportional to the realestate required, it is desired to reduce IC chip costs by reducing thefootprint required for a MOSCAP structure. Accordingly, one possibletechnique for reducing FEOL MOSCAP footprints is to form additionalcapacitor structures in the BEOL in circuit communication with the FEOLMOSCAP, preferably increasing the capacitance of the total FEOL/BEOLcapacitor structure while resulting in a relatively smaller FEOL MOSCAPfootprint.

Two types of capacitors commonly utilized in the BEOL are aMetal-Insulator-Metal Capacitor (MIMCAP) 100 schematically illustratedin FIG. 1 with respect to a chip substrate 114, and a Vertical NativeCapacitor (VNCAP) 200 schematically illustrated in FIG. 2. (FEOLstructures are omitted for simplicity of illustration.) The MIMCAP 100comprises a first plate 110 and a second plate 112, each having aconnector or port 116, 118, respectively, with a dielectric material 120placed between the plates 110, 112 to complete the capacitive structure.The VNCAP 200 also comprises a first plate 210 and a second plate 212,each having a connector or port 216, 218, respectively, with adielectric material 220 placed between the plates 210, 212 to completethe capacitive structure. What is significant is that the lateralarrangement of the MIMCAP 100 plates 110, 112 above the substratefootprint 130 results in asymmetrical parasitic capacitances of therespective plates 110, 112, whereas the vertical arrangement of thegenerally parallel VNCAP 200 plates 210, 212, projecting parallel platefootprints 230, 232, respectively, results in symmetrical parasiticplate 210, 212 capacitance properties.

The MIMCAP 100 and VNCAP 200 each offer distinctive circuit behaviorsand, in some BEOL applications, combinations of one or more MIMCAP's 100with one or more VNCAP's 200 may be preferred. However, the asymmetricalparasitic capacitances of the MIMCAP 100 plates 110, 112 produce apolarity for the port terminals 116, 118. In one respect, a circuitusing port 116 as an input port and port 118 as an output port resultsin different equivalent circuit behavior. In another respect, thepolarity difference may render the MIMCAP 100 a unidirectional device.And incorrect polarity usage may cause circuit performance degradation.Accounting for such polarity issues results in circuit designinefficiencies as additional design time must be expended to distinguishbetween input and output polarities.

In many instances, multiple MIMCAP capacitors are required on a singlechip substrate, with each having the same intrinsic capacitance value.In configurations wherein the capacitors are close to the substrate, thevariable extrinsic capacitances between the bottom plates closest to thesubstrate cannot be adequately controlled for in circuit design, as thevalue of the extrinsic capacitances may not be precisely predicted.Therefore, in conventional prior art practices wherein all of the platesclosest to the substrate are connected together, and all of the platesfarthest from the substrate are connected together, divergentcapacitance values are effectively created in the otherwise individuallyequivalent capacitors.

Additional problems arise for high-density on-chip BEOL capacitorstructures incorporating both MIMCAP's 100 and VNCAP's 200, sinceparallel connections between the VNCAP 200 and MIMCAP 100 componentsmust be provided to accommodate the divergent polarities of the portterminals 116, 118, and forming such parallel connections presentsstructural limitations on the resultant composite MIMCAP 100/VNCAP 200BEOL structure that diminishes possible chip real estate efficiencies.It also presents other difficulties in providing a symmetrical BEOLcapacitor structure created from multiple VNCAP's and MIMCAP's.

FIG. 3 illustrates an example of a single asymmetrical BEOL MIMCAP 300appropriate for use with the present invention, having a top plate 310and a bottom plate 320 arrayed laterally with respect to a substrate 314and having connectors or ports 316, 318, respectively. A dielectricmaterial 315 placed between the plates 310, 320 completes a capacitivestructure in a lateral plate arrangement with respect to a FEOLsubstrate 314. (Other FEOL structures are omitted for simplicity ofillustration.)

The substrate 314 conventionally is formed of silicon which isdielectric. Preferably, the dielectric material 315 has a permeabilityvalue greater than about 4 (er>4). It is to be understood that theplates 310, 320 can be formed of the same material, e.g. polysilicon orcopper or other conductive material, or different materials which can beused conventionally for capacitors, depending upon the need andprocesses.

The two conductive capacitive plates 310, 320 are mounted close enoughto the substrate 314 to have an extrinsic or parasitic capacitance,represented diagrammatically by the extrinsic capacitance values 324,322, respectively. The extrinsic capacitive values 322 between bottomplate 320 and substrate 314 defined within bottom plate footprint 340are greater than the extrinsic capacitive values 324 between plate 310and substrate 314 defined within top plate footprint 350, thisdifference resulting in differing port 316, 318 polarities as describedabove.

Referring now to FIG. 4, a pair of MIMCAP's 408, 409 are shown in aconventional parallel circuit structure 400 between two port terminals,wherein PORT 1 410 is connected to the bottom plates 432, 434 atconnectors 402, 403, respectively; and PORT 2 420 is connected to thetop plates 442, 444 at connectors 405, 406, respectively. The bottomplates 432, 434 form parasitic extrinsic capacitors 452, 454,respectively, with a FEOL substrate disposed below (not shown forclarity of illustration, but as described above with respect to FIGS. 1and 3). As the schematic representation of FIG. 4( b) illustrates, theparallel circuit structure 400 is asymmetrical as both of the parasiticextrinsic capacitors 452, 454 are accordingly connected to PORT 1 410,and no parasitic extrinsic capacitors are connected to PORT 2 420.

In one aspect, a symmetrical multi-MIMCAP capacitor design is providedthat eliminates the extrinsic/parasitic capacitance differences ofindividual asymmetrical MIMCAP's between their laterally-oriented topand bottom plates with respect to a FEOL chip substrate. For example,FIG. 5 illustrates the pair of MIMCAP's 408, 409 in a novelcross-coupled parallel circuit structure 500 between the two portterminals, wherein PORT 1 410 is connected to the MIMCAP 408 bottomplate 432 at connector 512 and to the MIMCAP 409 top plate 444 atconnector 513; and PORT 2 420 is connected to the MIMCAP 408 top plate442 at connector 515 and to the MIMCAP 409 bottom plate 434 at connector516. Again, the bottom plates 432, 434 form equivalent parasiticextrinsic capacitors 452, 454, respectively, with a FEOL substratedisposed below (not shown for clarity of illustration, but as describedabove with respect to FIGS. 1, 3 and 4). As the schematic representationof FIG. 5( b) illustrates, the cross-coupled parallel circuit structure500 is symmetrical as parasitic extrinsic capacitor 452 is accordinglyconnected to PORT 1 410, and parasitic extrinsic capacitor 454 isconnected to PORT 2 620.

In another aspect, more than two MIMCAP's may be arranged in across-coupled parallel circuit structure to provide symmetrical BEOL MIMstructures. Parasitic extrinsic capacitors created through substrateproximity are allocated evenly between the two circuit ports in order toprevent port polarity. For example, FIG. 6 illustrates anotherconventional multi-capacitor MIM structure 600, wherein four MIMCAP's624 are arranged in a parallel circuit structure between a first port630 and a second port 632, wherein all of the upper plates 610 areconnected together by connector 630, and all of the bottom plates 612more proximate to a chip substrate 614 are connected together byconnector 632. (It is to be understood that the substrate 614 may be onecontinuous substrate element, and that the substrate is shown indiscrete rectangular sections 614 in order to simplify and clarify theillustration.) Thus, there is no provision made for variations in theextrinsic capacitances of each of the MIMCAP's 624, and polarity resultsbetween the terminals 630 and 632.

In another aspect, FIG. 7 depicts a schematic perspective of analternative circuit structure with the four MIM capacitors 624 relativeto the substrate 614 according to this invention. More particularly,half of the upper plates 610 are connected to half of the bottom plates612 by first port connectors 736, and the other half of the top plates610 are connected by second port connectors 738 to the other half of thebottom plates 612. This results in a symmetrical capacitor circuit 700design with respect to the substrate 614, whereby parasitic capacitanceis allocated evenly to each of the first port 736 and second port 738,as also discussed with respect to FIG. 5 above. Thus, the presentinvention enables a composite symmetrical BEOL circuit 700 with multipleMIMCAP 624's, which offers improved Q-factor performance over a singleasymmetrical MIMCAP BEOL circuit (such as MIMCAP 300 of FIG. 3) with asimilar overall footprint.

In another aspect, the present invention also has application tomultiple MIMCAP structures incorporating other types of capacitors. Forexample, it is desirable to incorporate VNCAP's in BEOL chipapplications. FIG. 8 provides a perspective view of a VNCAP 800illustrating a parallel metal plate and composite capacitance structurethat is desirable in some BEOL capacitor applications. The VNCAP 800 isdefined by three groups of progressively larger metal layers. A firstbottom group 860 of four metal layers (M1 through M4) are each separatedby an insulator (or dielectric) material layers having connective viasdistributed there though (V1 through V3), generally the first metallayer M1 in circuit connection with FEOL circuit structures,illustratively including MOSCAP structures (not shown). A second middlegroup of larger metal layers 862 (M5 and M6, respectively, the fifth andsixth metal layers) are mounted on the first group of layers 860 andseparated by a dielectric material/Via layer V4, with metal layers M5and M6 separated from each other by dielectric/Via layer V5. Lastly, athird largest top group 864 of metal layers (M7 and M8, respectively,the seventh and eighth metal layers) are mounted atop the second metallayer group 862 and separated there from by a dielectric material/Vialayer V6, from each other and a dielectric/Via layer V7. In anotheraspect, each of the three VNCAP metal levels 860, 862 and 864 furthercomprise parallel “−” signed and “+” signed metal plates. Moreparticularly, the VNCAP first level 860 metal layers M1 through M4further each comprise a plurality of “+” signed metal plates 820 in analternative horizontal parallel relationship with a plurality of “−”signed metal plates 822. The VNCAP second middle level 862 metal layersM5 and M6 further each comprise a plurality of “+” signed metal plates830 in an alternative horizontal parallel relationship with a pluralityof “−” signed metal plates 832. And the VNCAP third top level 864 metallayers M7 and M8 further each comprise a plurality of “+” signed metalplates 840 in an alternative horizontal parallel relationship with aplurality of “−” signed metal plates 842.

VNCAP's may offer superior capacitance capabilities in BEOL applicationsover smaller footprints than may be practiced with other capacitorstructures. In another aspect, the three divergently sized VNCAP 800bottom 860, middle 862 and top 864 metal layers each define a capacitorregion having discrete capacitance values Q1(C1), Q2(C2) and Q3(C3),respectively. Thus, the VNCAP 800 may improve Q-factor performance inthe overall FEOL/BEOL circuit structure by enabling multiple discrete Qelements within a small footprint, as is apparent to one skilled in theart. Accordingly, in another aspect of the present invention, FIG. 9depicts a schematic perspective of a symmetrical multi-capacitor BEOLcircuit structure 900 according to this invention. More particularly,first and second MIM capacitors 920, 924 are in a cross-coupled parallelcircuit connection with the VNCAP 800 of FIG. 8. (For clarity, the VNCAP800 middle metal layers 862 are omitted from the view shown in FIG. 9).A PORT 1 terminal 905 is thus in circuit connection 909 with the firstMIMCAP 920 upper plate 902, in circuit connection 922 with the secondMIMCAP 924 bottom plate 904 and with the positive “+” VNCAP 800capacitor plates through terminal 802 (as described above with respectto FIG. 8). PORT 2 terminal 906 is in circuit connection 907 with thesecond MIMCAP 924 upper plate 903, in circuit connection 921 with thefirst MIMCAP 920 bottom plate 901 and with the negative “−” VNCAP 800capacitor plates through terminal 801.

Although the present VNCAP example is described with respect tospecified numbers of metal layers within designated capacitor groupings,as well as overall metal layer totals, it is to be understood that theinventions described herein are not restricted to the specific exemplaryembodiments. It will be readily apparent that more or less metal layersmay be practiced within VNCAP's within the teachings herein, and oneskilled in the art may readily form alternative embodiments withdifferent metal layer numbers and combinations.

In another aspect, the present invention may also be practiced withother multi-MIMCAP structures. FIG. 10 depicts a schematic perspectiveof a conventional rectangular array multi-capacitor MIM structure 1000,wherein four MIMCAP's 1030 having upper plates 1010, lower plates 1012and dielectric layer 1020 therebetween are arranged in a parallelcircuit structure between a first port 1002 and a second port 1004. Thistype of array may provide improved Q-factor values relative to othersingle MIMCAP or multi-MIMCAP arrays in BEOL applications. However, asdiscussed above, the four MIMCAP's 1030 each have greater parasiticcapacitance values relative to the substrate 1014 at their bottom plates1012 than at their upper plates 1010. In this conventional circuitstructure, all of the upper plates 1010 are connected to the first port1002, and all of the bottom plates 1012 more proximate to the chipsubstrate 1014 are connected to the second port 1004. (Again, it is tobe understood that the substrate 1014 may be one continuous substrateelement, and that the substrate is shown in discrete rectangularsections 1014 in order to simplify and clarify the illustration.) Thus,there is no provision made for variations in the extrinsic capacitancesof each of the MIMCAP's 1030, and polarity results between the terminals1002 and 1004 as discussed above.

Accordingly, in another aspect, FIG. 11 provides a top plan view ofsymmetrical rectangular array multi-capacitor MIM structure 1100according to the present invention. The four MIMCAP's 1030 arranged in aparallel circuit structure between a first port 1132 and a second port1138, wherein half of the upper plates 1010 are connected to half of thebottom plates 1012 in adjacent MIMCAP's 1030 by port connectors 110 andport circuit wiring 1112, and the other half of the top plates 1010 areconnected to the other half of the bottom plates 1012 in adjacentMIMCAP's 1030 by port connectors 110 and port circuit wiring 1112. Thisresults in a symmetrical capacitor circuit 1100 design with respect tothe substrate 1014, whereby parasitic capacitance is allocated evenly toeach of the first port 1136 and second port 1138, as discussed above.

FIG. 12 is a side perspective illustration of a portion of a compositeVNCAP/MIMCAP structure according to the present invention. Moreparticularly the MIMCAP 920 of FIG. 9 is incorporated between the VNCAP800 metal layers within the dielectric/Via layer V4 between thebottommost Metal 5 layer of the middle VNCAP layers 862 and theuppermost Metal 4 layer of the smaller bottom VNCAP metal layers 860. Atop node contact 1206 electrically connects the MIMCAP upper plate 902to the upper Metal 5 layer 862 “+” signed metal plates 830, and a bottomnode contact 1208 disposed laterally to the top node contact 1206electrically connects the MIMCAP bottom plate 904 to the upper Metal 5layer 862 “−” signed metal plates 832. More particularly the MIMCAP 920top node contact 1206 provides circuit connection to a “+” signed firstport (not shown) and the MIMCAP 920 bottom node contact 1208 providescircuit connection to a “−” signed second port (not shown), wherein thesecond MIMCAP 924 (hot shown in FIG. 12) is cross-coupled to said firstand second ports to provide extrinsic capacitance symmetry, with a topnode contact electrically connecting its upper plate to the 862 “−”signed metal plates 832 and a bottom node contact electricallyconnecting its bottom plate to the “+” signed metal plates 830, as willbe understood by reference to the MIMCAP 920,924 circuit connectionsillustrated by FIGS. 8 and 9 and described above.

The dielectric/Via layer V4 comprises a dielectricelectrically-insulating material 1220 disposed between the upper Metal 5layer 862 and the lower Metal 4 860 layer, structurally supporting theMetal 5 layers above the Metal 4 layers as well as electricallyseparating them. In some embodiments the electrically-insulatingmaterial 1220 is a silicon dioxide compound, though otherelectrically-insulating materials may be practiced. Vias 1210 are formedthrough the dielectric 1220 to form electrical connections, for examplebetween the upper Metal 5 layer 862 “−” signed metal plate 832 and thelower Metal 4 860 layer as shown.

In the present invention, special MIMCAP port contacts 1206 and 1208 arealso formed with the V4 electrically-insulating material 1220. And theMIMCAP bottom plate 904 is electrically-insulated from the lower Metal 4860 layer from a layer 1204 of the electrically-insulating material1220. In one aspect the top node contact 1206 is shorter than the bottomnode contact 1208, since the upper plate 902 is closer to the “+” signedmetal plate 830 relative to the bottom plate 904/“−” signed metal plate832 distance.

In the structure of FIG. 12, incorporation of the MIMCAP's 920,924efficiently increases the capacitance density of the VNCAP 800 withoutrequiring additional chip structure real estate or increasing the sizeof the resultant structure through use of the already-existingdielectric/Via layer V4. This is accomplished by taking advantage of thenaturally asymmetrical structures of the MIMCAP 920,924, which providesfor lateral MIMCAP 920,924 port connections to the upper Metal 5 layer862 while maintaining electrical separation from the lower Metal 4 860layer through incorporation into the freely-available existingdielectric/Via layer V4 dielectric material. Chip area encompassed bythe dielectric layer 1204 and the top surfaces of the Metal 4 860 layerbelow the MIMCAP's 920,924 are also free for use in chip design, due tothe top node contact 1206 and bottom node contact 1208lateral-connection arrangement, in this aspect further providing chipefficiencies while still increasing BEOL capacitance density.

Thus, the present invention enables the use of asymmetrical capacitorcomponents in vertical BEOL capacitor structures. More particularly,VNCAP's generally have a natural symmetry with the extrinsic capacitanceof their two nodes equivalent, enabling incident substrate noise fromthe two nodes to cancel and the VNCAP extrinsic capacitance to be addedpositively into capacitance density for the parallel plate capacitorgeometry. Thus, multiple VNCAP layers may be easily incorporated intovertical BEOL capacitor structures without impact on the symmetry of theresultant BEOL capacitor structure. However, coupling leakage for highfrequency signals may occur between the VNCAP nodes between capacitorplates, and parallel plate VNCAP BEOL capacitor structure applicationsare accordingly generally limited to by-pass capacitor or AC-decouplingcapacitor structures.

MIMCAP's do not suffer the same coupling leakage problems. And includingMIMCAPs in BEOL capacitor structures can also offer higher capacitancedensity relative to VNCAP, MOSCAP and other capacitor structures. Forexample, capacitors may be compared with respect to relative capacitancedensity, which may be defined as capacitance per 1 μm². In silicontechnology application examples, MIMCAP's have generally smallerdimensions than MOSCAP's then may be generally practiced, in part due tohigher MIMCAP permeability values which increase capacitance density.Thus, MIMCAP capacitance density generally approaches about 20 fF/μm²,compared to MOS capacitance densities approaching about 5 fF/μm². Thus,MOSCAP's generally require larger chip real estate in order to achievecorresponding MIMCAP capacitance, which teaches away from use ofMOSCAP's in efficient inter-metal layer incorporation in BEOL structuresaccording to the present invention. The present invention providesefficiency in using naturally asymmetrical MIMCAP's to form symmetricalBEOL MIMCAP/VNCAP structures through novel smart connection layouts andstructures according to the present invention, in some examples incombination with FEOL MOSCAP's.

The amount of extrinsic capacitance of a MIMCAP relative to a basesubstrate layer is inversely proportional to the distance of the MIMCAPfrom said base substrate layer. More particularly FIG. 13 illustratesthe distance d_(n) for the MIMCAP 920 from said base substrate layer1304 for an exemplary but not exhaustive plurality of possible MIMCAP920 locations within the VNCAP 800, and more particularly within aMIMCAP/VNCAP BEOL structure disposed above a FEOL MOSCAP 1302 comprisingthe base substrate layer 1304 according to the present invention. Thus,locating the MIMCAP 920 between Metal layers 1 and 2 a distance d₅ fromthe base substrate 1304 results in a higher potential extrinsiccapacitance relative to any other of the possible metal layer locations(distance d₄ for incorporation between Metal layers 2 and 3, etc.).Accordingly, locations of multiple MIMCAP's 920,924 with divergentdistance d_(n) values causes problems in balancing their respectiveextrinsic capacitances, and for this additional reason prior artteaching generally teaches away from incorporation of MIMCAP's in BEOLstructures.

The structures of the present invention overcome these problems.Pluralities of MIMCAP's (for example the plurality circuits illustratedin FIGS. 9 and 11) are incorporated between any of the metal layers M1through M8 as illustrated in FIG. 12 and discussed above. However, it ispreferred that only one inter-layer incorporation of MIMCAP's bepracticed, independent of the number of MIMCAP's incorporated: forexample, only between M4 and M5, or only between M2 and M3, etc. Thisprovides for assuring symmetrical parasitic capacitance characteristicsby avoiding divergent base substrate layer distance d_(n) values betweenpluralities of different MIMCAP top plates 902,903 and betweenpluralities of different MIMCAP bottom plates 901,904 and is alsogenerally more efficient in existing silicon chip technology processes,wherein locating MIMCAP's in more than one dielectric/Via level Vialthrough Vial may cause manufacturing difficulties or inefficiencies.More particularly, only one MIMCAP may generally be fabricated betweenany of the M1 through M8 metal layers after, wherein other MIMCAP'scannot be fabricated either above or below said MIMCAP incorporatinglayer due to semiconductor manufacturing limitations and cost.

FIG. 14 shows a block diagram of an exemplary design flow 1400 used forexample, in semiconductor design, manufacturing, and/or test. Designflow 1400 may vary depending on the type of IC being designed. Forexample, a design flow 1400 for building an application specific IC(ASIC) may differ from a design flow 1400 for designing a standardcomponent. Design structure 1420 is preferably an input to a designprocess 1410 and may come from an IP provider, a core developer, orother design company or may be generated by the operator of the designflow, or from other sources. Design structure 1420 comprises anembodiment of the invention as shown in one or more of FIGS. 3, 5A, 5B,7, 8, 9, 11, 12 and 13 in the form of schematics or HDL, ahardware-description language (e.g., Verilog, VHDL, C, etc.). Designstructure 1420 may be contained on one or more machine readable medium.For example, design structure 1420 may be a text file or a graphicalrepresentation of an embodiment of the invention as shown in one or moreof FIGS. 3, 5A, 5B, 7, 8, 9, 11, 12 and 13. Design process 1410preferably synthesizes (or translates) an embodiment of the invention asshown in one or more of FIGS. 3, 5A, 5B, 7, 8, 9, 11, 12 and 13 into anetlist 1480, where netlist 1480 is, for example, a list of wires,transistors, logic gates, control circuits, I/O, models, etc. thatdescribes the connections to other elements and circuits in anintegrated circuit design and recorded on at least one of machinereadable medium. For example, the medium may be a CD, a compact flash,other flash memory, a packet of data to be sent via the Internet, orother networking suitable means. The synthesis may be an iterativeprocess in which netlist 1480 is resynthesized one or more timesdepending on design specifications and parameters for the circuit.

Design process 1410 may include using a variety of inputs; for example,inputs from library elements 1430 which may house a set of commonly usedelements, circuits, and devices, including models, layouts, and symbolicrepresentations, for a given manufacturing technology (e.g., differenttechnology nodes, 32 nm, 45 nm, 90 nm, etc.), design specifications1440, characterization data 1450, verification data 1460, design rules1470, and test data files 1485 (which may include test patterns andother testing information). Design process 1410 may further include, forexample, standard circuit design processes such as timing analysis,verification, design rule checking, place and route operations, etc. Oneof ordinary skill in the art of integrated circuit design can appreciatethe extent of possible electronic design automation tools andapplications used in design process 1410 without deviating from thescope and spirit of the invention. The design structure of the inventionis not limited to any specific design flow.

Design process 1410 preferably translates an embodiment of the inventionas shown in one or more of FIGS. 3, 5A, 5B, 7, 8, 9, 11, 12 and 13,along with any additional integrated circuit design or data (ifapplicable), into a second design structure 1490. Design structure 1490resides on a storage medium in a data format used for the exchange oflayout data of integrated circuits and/or symbolic data format (e.g.information stored in a GDSII (GDS2), GL1, OASIS, map files, or anyother suitable format for storing such design structures). Designstructure 1490 may comprise information such as, for example, symbolicdata, map files, test data files, design content files, manufacturingdata, layout parameters, wires, levels of metal, vias, shapes, data forrouting through the manufacturing line, and any other data required by asemiconductor manufacturer to produce an embodiment of the invention asshown in one or more of FIGS. 3, 5A, 5B, 7, 8, 9, 11, 12 and 13. Designstructure 1490 may then proceed to a stage 1495 where, for example,design structure 1490: proceeds to tape-out, is released tomanufacturing, is released to a mask house, is sent to another designhouse, is sent back to the customer, etc.

While preferred embodiments of the invention have been described herein,variations in the design may be made, and such variations will beapparent to those skilled in the art of capacitors, as well as to thoseskilled in other arts. For example, it will be understood that thepresent invention is not limited to the specific numbers andarrangements of MIMCAP's and VNCAP's described thus far, and theinvention can work with circuit structures comprising more that four MIMcapacitors.

1. A semiconductor chip capacitance circuit, comprising: avertical-native capacitor comprising a plurality of vertical-nativecapacitor metal layers parallel to each other and vertically alignedabove and parallel to a planar front-end-of-line semiconductor basesubstrate, adjacent layers of the vertical-native capacitor metal layersstructurally and electrically separated by electrically-insulatingdielectric material layers; each of the vertical-native capacitor metallayers comprising a plurality of positive port metal plates in analternating horizontal parallel relationship with a plurality ofnegative port metal plates and in an alternating vertical parallelrelationship to a plurality of negative port metal plates of an adjacentvertical-native capacitor metal layer; first and second asymmetricalrectangular metal-insulator-metal capacitors within at least one of thedielectric material layers in a lateral rectangular array parallel toand spaced from the semiconductor base substrate; the first asymmetricalmetal-insulator-metal capacitor having a first planar rectangular metalbottom plate parallel to and spaced a bottom plate distance from thesemiconductor base substrate and projecting a first bottom platefootprint vertically relative to the semiconductor base substrate, and afirst planar rectangular metal top plate above and parallel to the firstmetal bottom plate and separated from the first bottom plate by thedielectric material, the first planar rectangular metal top plateparallel to and spaced a top plate distance from the semiconductor basesubstrate that is greater than the bottom plate distance, the firstrectangular top plate smaller than the first rectangular bottom topplate and aligned to fit entirely within the first bottom platefootprint relative to the semiconductor base substrate and to expose afirst bottom plate remainder upper lateral connector surface verticallywithin the first bottom plate footprint to a one of a vertical-nativecapacitor positive port metal plate horizontally alternating with anegative port metal plate located above the first bottom plate and abovethe at least one dielectric material layer; the second asymmetricalmetal-insulator-metal capacitor having a second planar rectangular metalbottom plate parallel to and spaced the bottom plate distance from thesemiconductor base substrate and projecting a second bottom platefootprint vertically relative to the semiconductor base substrate andelectrically connected to the first asymmetrical metal-insulator-metalcapacitor top plate, and a second planar rectangular metal top plateabove and parallel to the second metal bottom plate and separated fromthe second bottom plate by the dielectric material and electricallyconnected to the first asymmetrical metal-insulator-metal capacitorbottom plate, the second planar rectangular metal top plate parallel toand spaced the top plate distance from the semiconductor base substrate,the second rectangular top plate smaller than the second rectangularbottom top plate and aligned to fit entirely within the second bottomplate footprint relative to the semiconductor base substrate; a firstbottom plate port contact vertically within the dielectric materiallayer and within the first bottom plate footprint that electricallyconnects the exposed first bottom plate remainder upper lateralconnector surface to the one vertical-native capacitor metal platelocated vertically above the first bottom plate; and a first top plateport contact vertically within the at least one dielectric materiallayer and within the first bottom plate footprint that electricallyconnects the first top plate to an other of the of horizontallyalternating vertical-native capacitor positive port metal plate andnegative port metal plate located vertically above the first top plateand the at least one dielectric material layer.
 2. The semiconductorcapacitance circuit assembly of claim 1, wherein the first and secondasymmetrical metal-insulator-metal capacitors are incorporated withinthe at least one dielectric material layer within a semiconductor chipcapacitance circuit back-end-of-line region.
 3. The semiconductorcapacitance circuit assembly of claim 2, wherein: the first top plateforms a first top plate extrinsic capacitance with the semiconductorbase substrate as a function of the top plate distance; the second topplate forms a second top plate extrinsic capacitance with thesemiconductor base substrate as a function of the top plate distance;the first bottom plate forms a first bottom plate extrinsic capacitancewith the semiconductor base substrate as a function of the bottom platedistance, the first bottom plate extrinsic capacitance greater than thefirst top plate extrinsic capacitance; the second bottom plate forms asecond bottom plate extrinsic capacitance with the semiconductor basesubstrate as a function of the bottom plate distance, the second bottomplate extrinsic capacitance greater than the second top plate extrinsiccapacitance; the electrical connection of the exposed first bottom plateremainder upper lateral connector surface to the one vertical-nativecapacitor metal plate imparts a total metal-insulator-metal capacitorextrinsic capacitance to a first port in circuit communication with thevertical-native capacitor metal plate equal to a sum of the second topplate extrinsic capacitance and the first bottom plate extrinsiccapacitance; and the electrical connection of the first top plate to theother vertical-native capacitor metal plate imparts a totalmetal-insulator-metal capacitor extrinsic capacitance to a second portin circuit communication with the other vertical-native capacitor metalplate equal to a sum of the second bottom plate extrinsic capacitanceand the first top plate extrinsic capacitance and equal to the firstport total metal-insulator-metal capacitor extrinsic capacitance.
 4. Thesemiconductor capacitance circuit assembly of claim 3, wherein theplanar front-end-of-line semiconductor base substrate is ametal-oxide-silicon capacitor base substrate.
 5. The semiconductorcapacitance circuit assembly of claim 4, wherein the vertical-nativecapacitor metal layers define a vertical-native capacitor footprintdisposed vertically above the metal-oxide-silicon capacitor basesubstrate and encompassing the first and the second bottom platefootprints, and further comprising: a first port terminal disposedwithin the vertical-native capacitor footprint on an upper layer portmetal plate in circuit communication with the one of the vertical-nativecapacitor metal layer plates; and a second port terminal disposed withinthe vertical-native capacitor footprint on an upper layer port metalplate in circuit communication with the other of the vertical-nativecapacitor metal layer plates.
 6. The semiconductor capacitance circuitassembly of claim 5, further comprising: pluralities of each of thefirst and the second asymmetrical rectangular metal-insulator-metalcapacitors within the at least one dielectric material layer in thelateral rectangular array parallel to and spaced from the semiconductorbase substrate, wherein a total quantity of the plurality of the firstbottom plates is equal to a total quantity of the plurality of the firsttop plates, and wherein a total quantity of the plurality of the secondbottom plates is equal to a total quantity of the plurality of thesecond top plates.
 7. The semiconductor capacitance circuit assembly ofclaim 6, wherein the plurality of the first top plates, the plurality ofthe first bottom plates, the plurality of the second top plates and theplurality of the second bottom plates are disposed in a rectangulararray generally parallel to the base substrate.
 8. The semiconductorcapacitance circuit assembly of claim 7 wherein each of the top metalplates and the bottom metal plates comprise the same material.
 9. Thesemiconductor capacitance circuit assembly of claim 8 wherein the platematerial is a metal material or a polysilicon material.
 10. Thesemiconductor capacitance circuit assembly of claim 9 wherein the firstinsulator and the second insulator comprise dielectric material having apermeability value greater than 4 er.